REMOVE ALL SACRIFICAL MATERIAL USING DRY PROCESSING

Dry isotropic chemical etch removes sacrificial materials, and "releases" the 3D MEMS structure. The structure now has Free Surfaces which are residue free. No pre-treatment, rinse or dry required, fast process times on a wafer or sample scale.

  > Release Etch >

memsstar® SVR™ process modules are used to remove all the sacrificial material quickly and without leaving and deposits or residues. This is achieved with 2 etch chemistries;

VHF      Vapour Hydrogen Flouride

XeF2    Xenon Diflouride